Plasmochemical Etching of Silicon in Diener Nano Device

Authors

  • M. Urbánek Institute of Scientific Instruments, Academy of Sciences of the Czech Republic, Brno
  • S. Krátký Institute of Scientific Instruments, Academy of Sciences of the Czech Republic, Brno
  • M. Matějka Institute of Scientific Instruments, Academy of Sciences of the Czech Republic, Brno
  • V. Kolařík Institute of Scientific Instruments, Academy of Sciences of the Czech Republic, Brno
  • M. Horáček Institute of Scientific Instruments, Academy of Sciences of the Czech Republic, Brno

Keywords:

plasma chemical etching, silicon, etching rate, etching selectivity

Abstract

This article deals with plasma etching of Si in a CF4/O2 mixture. This is a common way of Si etching used in micro- and nanofabrication. We determined important parameters such as etching rates and selectivity of Si and PMMA of the process. Experimental part was carried out on plasma system Diener nano.

Downloads

Published

2014-06-15

How to Cite

Urbánek, M., Krátký, S., Matějka, M., Kolařík, V., & Horáček, M. (2014). Plasmochemical Etching of Silicon in Diener Nano Device. Chemické Listy, 108(6), 592–595. Retrieved from http://ww-w.chemicke-listy.cz/ojs3/index.php/chemicke-listy/article/view/485

Issue

Vol. 108 No. 6 (2014)

Section

Articles

Most read articles by the same author(s)